Nucleation growth of thin sputtered zinc films
Identifieur interne : 001683 ( France/Analysis ); précédent : 001682; suivant : 001684Nucleation growth of thin sputtered zinc films
Auteurs : C. Tellier [France] ; A. Tosser [France]Source :
- Thin Solid Films [ 0040-6090 ] ; 1976.
Abstract
Data on the resistance of thin sputtered zinc films before and after thermal aging suggest the existence of two layers: the lower layer, about 140 Å thick, corresponding to the first critical thickness, is strongly modified by aging, and electronic conduction occurs by reflection at grain boundaries (M-S model); the top layer is slightly modified by aging, and conduction occurs by reflection at grain boundaries and on the top surface. The phenomena are quite consistent with the theory of the nucleation growth of sputtered films.
Url:
DOI: 10.1016/0040-6090(76)90241-8
Affiliations:
Links toward previous steps (curation, corpus...)
- to stream Istex, to step Corpus: 000689
- to stream Istex, to step Curation: 000689
- to stream Istex, to step Checkpoint: 001673
- to stream Main, to step Merge: 002C10
- to stream Main, to step Curation: 002B30
- to stream Main, to step Exploration: 002B30
- to stream France, to step Extraction: 001683
Links to Exploration step
ISTEX:BC71301D38D1A29A722ABE8EF1DB973EEB2034D0Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>Nucleation growth of thin sputtered zinc films</title><author><name sortKey="Tellier, C" sort="Tellier, C" uniqKey="Tellier C" first="C." last="Tellier">C. Tellier</name></author><author><name sortKey="Tosser, A" sort="Tosser, A" uniqKey="Tosser A" first="A." last="Tosser">A. Tosser</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:BC71301D38D1A29A722ABE8EF1DB973EEB2034D0</idno><date when="1976" year="1976">1976</date><idno type="doi">10.1016/0040-6090(76)90241-8</idno><idno type="url">https://api.istex.fr/document/BC71301D38D1A29A722ABE8EF1DB973EEB2034D0/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000689</idno><idno type="wicri:Area/Istex/Curation">000689</idno><idno type="wicri:Area/Istex/Checkpoint">001673</idno><idno type="wicri:doubleKey">0040-6090:1976:Tellier C:nucleation:growth:of</idno><idno type="wicri:Area/Main/Merge">002C10</idno><idno type="wicri:Area/Main/Curation">002B30</idno><idno type="wicri:Area/Main/Exploration">002B30</idno><idno type="wicri:Area/France/Extraction">001683</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">Nucleation growth of thin sputtered zinc films</title><author><name sortKey="Tellier, C" sort="Tellier, C" uniqKey="Tellier C" first="C." last="Tellier">C. Tellier</name><affiliation wicri:level="1"><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire d'Electronique et d'Automatique, U.E.R. des Sciences et Techniques, B.P. 4006</wicri:regionArea><wicri:noRegion>B.P. 4006</wicri:noRegion><wicri:noRegion>B.P. 4006</wicri:noRegion></affiliation></author><author><name sortKey="Tosser, A" sort="Tosser, A" uniqKey="Tosser A" first="A." last="Tosser">A. Tosser</name><affiliation wicri:level="1"><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire d'Electronique et d'Automatique, U.E.R. des Sciences et Techniques, B.P. 4006</wicri:regionArea><wicri:noRegion>B.P. 4006</wicri:noRegion><wicri:noRegion>B.P. 4006</wicri:noRegion></affiliation></author></analytic><monogr></monogr><series><title level="j">Thin Solid Films</title><title level="j" type="abbrev">TSF</title><idno type="ISSN">0040-6090</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1976">1976</date><biblScope unit="volume">35</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="65">65</biblScope><biblScope unit="page" to="74">74</biblScope></imprint><idno type="ISSN">0040-6090</idno></series><idno type="istex">BC71301D38D1A29A722ABE8EF1DB973EEB2034D0</idno><idno type="DOI">10.1016/0040-6090(76)90241-8</idno><idno type="PII">0040-6090(76)90241-8</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0040-6090</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Data on the resistance of thin sputtered zinc films before and after thermal aging suggest the existence of two layers: the lower layer, about 140 Å thick, corresponding to the first critical thickness, is strongly modified by aging, and electronic conduction occurs by reflection at grain boundaries (M-S model); the top layer is slightly modified by aging, and conduction occurs by reflection at grain boundaries and on the top surface. The phenomena are quite consistent with the theory of the nucleation growth of sputtered films.</div></front></TEI><affiliations><list><country><li>France</li></country></list><tree><country name="France"><noRegion><name sortKey="Tellier, C" sort="Tellier, C" uniqKey="Tellier C" first="C." last="Tellier">C. Tellier</name></noRegion><name sortKey="Tosser, A" sort="Tosser, A" uniqKey="Tosser A" first="A." last="Tosser">A. Tosser</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/France/explor/LeHavreV1/Data/France/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001683 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 001683 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/France
|area= LeHavreV1
|flux= France
|étape= Analysis
|type= RBID
|clé= ISTEX:BC71301D38D1A29A722ABE8EF1DB973EEB2034D0
|texte= Nucleation growth of thin sputtered zinc films
}}
| This area was generated with Dilib version V0.6.25. |  |